PJE8412_R1_00001

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Mfr. #:

PJE8412_R1_00001

Mfr.:

Panjit International Inc.

Описание:

30V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJE8412_R1_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJE8412_R1_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	a98c7ec8106cf16aced8afc464bc6bdf
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	3efca1d41e323fed8d8e29cc85e49765
Drive Voltage (Max Rds On, Min Rds On):	c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:	c53043ca9e6788417a0697107eefa7ae
Vgs(th) (Max) @ Id:	a209081fc9e80668dd6ffb499d3c9fcb
Gate Charge (Qg) (Max) @ Vgs:	48d839c0aebd39e60119a798f8fcbfdd
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	bf30ebe390d6fe1c52c0aa65aa8dd1e4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	87200f2944eb489a61ca5ba65f1fbad1
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	a3aeb12e681ccde3b9a11bc7ce332447
Package / Case:	a3aeb12e681ccde3b9a11bc7ce332447