PJQ4404P_R2_00001

PJQ4404P_R2_00001

Images are for reference only
See Product Specifications

PJQ4404P_R2_00001
Описание:
30V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJQ4404P_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJQ4404P_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:fe5fd718815a56b2809e5522d2e0f8ff
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:fbca3aa32ad37100af3fd3e054878c3b
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:034b8bdcfb6dac375fa1893bc06ab017
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:34d8a6a60f3da05f2d4f720a83357105
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f188cd67c4730f35a99326e00f718db1
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:1ed2412fd9fde5296a64c275c290b727
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SI4386DY-T1-GE3
SI4386DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 11A 8SO
FDMS8350L
FDMS8350L
Fairchild Semiconductor
FDMS8350L - N-CHANNEL POWERTRENC
RF1S45N02L
RF1S45N02L
Harris Corporation
45A, 20V, 0.022OHM, N-CHANNEL LO
IRF642R
IRF642R
Harris Corporation
N-CHANNEL POWER MOSFET
PJD25N06A-AU_L2_000A1
PJD25N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
TK7S10N1Z,LXHQ
TK7S10N1Z,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 7A DPAK
NTPF165N65S3H
NTPF165N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRF610S
IRF610S
Vishay Siliconix
MOSFET N-CH 200V 3.3A D2PAK
IXFC30N60P
IXFC30N60P
IXYS
MOSFET N-CH 600V 15A ISOPLUS220
STB6N62K3
STB6N62K3
STMicroelectronics
MOSFET N-CH 620V 5.5A D2PAK
TSM088NA03CR RLG
TSM088NA03CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 61A 8PDFN
R6530ENXC7G
R6530ENXC7G
Rohm Semiconductor
650V 30A TO-220FM, LOW-NOISE POW
Вас также может заинтересовать
1.5SMCJ43AS_R1_00001
1.5SMCJ43AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P4KE47AS_AY_00001
P4KE47AS_AY_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA68CAS_R1_00001
P4SMA68CAS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMAJ9.0C_R1_00001
P4SMAJ9.0C_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
5KP7.0A_R2_00001
5KP7.0A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
ER2002FCT_T0_00001
ER2002FCT_T0_00001
Panjit International Inc.
ISOLATION SUPERFAST RECOVERY REC
ED304S_L2_00001
ED304S_L2_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
SD340YS_S2_00001
SD340YS_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZT52-B14S_R1_00001
BZT52-B14S_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMBZ5229B_R1_00001
MMBZ5229B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMSZ5260AS-AU_R1_000A1
MMSZ5260AS-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS51A14CS_R1_00001
PZS51A14CS_R1_00001
Panjit International Inc.
SILICON ZENER DIODE