SD520YS_S2_00001

SD520YS_S2_00001

Images are for reference only
See Product Specifications

SD520YS_S2_00001
Описание:
SURFACE MOUNT SCHOTTKY BARRIER R
Упаковка:
Tape & Reel (TR)
Datasheet:
SD520YS_S2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SD520YS_S2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Average Rectified (Io):4dd8e57bba533ac70e32f1b72e65943c
Voltage - Forward (Vf) (Max) @ If:c13e0f972f66bd9ae0edd8aab0f2c710
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:ba49843de5fe23d792e1616450cbe0f1
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:b2db944416af296787012d8a4bee58d3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MMSD3070
MMSD3070
onsemi
DIODE GEN PURP 200V 200MA SOD123
HS2GAL
HS2GAL
Taiwan Semiconductor Corporation
50NS, 2A, 400V, HIGH EFFICIENT R
S8JC V7G
S8JC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A DO214AB
P3D06002E2
P3D06002E2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 2A TO252-2
PNE20060EPEZ
PNE20060EPEZ
Nexperia USA Inc.
HYPERFAST RECOVERY RECTIFIER
UF4006H
UF4006H
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
SBR10B45P5-7D
SBR10B45P5-7D
Diodes Incorporated
DIODE SBR 45V 10A POWERDI5
RM 10V
RM 10V
Sanken
DIODE GEN PURP 400V 1.2A AXIAL
UPS120E/TR13
UPS120E/TR13
Microchip Technology
DIODE SCHOTTKY 20V 1A POWERMITE
VSB1545-M3/73
VSB1545-M3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 6A P600
RGP10J-7008M3/73
RGP10J-7008M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
SRA20150HC0G
SRA20150HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 20A TO220AC
Вас также может заинтересовать
P4FL24A-AU_R1_000A1
P4FL24A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC27CA-AU_R1_000A1
1.5SMC27CA-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
3.0SMCJ180CA_R1_00001
3.0SMCJ180CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4FL3.3A-AU_R1_000A1
P4FL3.3A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
RS1D_R1_00001
RS1D_R1_00001
Panjit International Inc.
SMA, FAST
PG5395_R2_00001
PG5395_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
PG208R_R2_00001
PG208R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
MB16_R1_00001
MB16_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZT52-B10_R1_00001
BZT52-B10_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-B6V2-AU_R1_000A1
BZT52-B6V2-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
DMMT3904W-AU_R1_000A1
DMMT3904W-AU_R1_000A1
Panjit International Inc.
SOT-363, TRANSISTOR
PJX8807_R1_00001
PJX8807_R1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M