R8001CND3FRATL

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See Product Specifications

Mfr. #:

R8001CND3FRATL

Mfr.:

Rohm Semiconductor

Описание:

MOSFET N-CH 800V 1A TO252

Упаковка:

Tape & Reel (TR)

Datasheet:

R8001CND3FRATL Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	R8001CND3FRATL
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	5ec53c66a19049c976ca5e6f7214e587
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2553f8d1d484e1b1094af77db9e4e125
Vgs(th) (Max) @ Id:	5029a9e50940877c0d9cb4df34a90bb1
Gate Charge (Qg) (Max) @ Vgs:	8082a543d44cdbc2d0ac85111f47dade
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	9599881b19ba103e54af4d61275d0e39
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	27cc3bf8eca6e148f3a5d1e543db0f2e
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95