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See Product Specifications
| номер части: | 2SB1481(TOJS,Q,M) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 84ca31d47822b436e7a9e53e2a08b38a |
| Voltage - Collector Emitter Breakdown (Max): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Vce Saturation (Max) @ Ib, Ic: | b5588b8aaee30dad377aefba4c23a69c |
| Current - Collector Cutoff (Max): | b9e92fba581cb4d1c1c638b9e7574c83 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 83d311c52f00e1bb32c625f10fc3da0e |
| Power - Max: | b8a311ed3f21d724b699490a1101fe1b |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a02e0d1a928de3366340ceae094aecd8 |
| Supplier Device Package: | 2dd8b787e28aa6ef43cc949cca56403f |
