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See Product Specifications
| номер части: | 2SD1221-Y(Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | d5d5ab45ca68569cc2a705ef6b71ef92 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | e33131270eccc464ae7eda684cba9dda |
| Current - Collector Cutoff (Max): | 172db04a50a1ace1828c4f7ae6dae515 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3f9208c9cfd9cc34cb44992bd4dc54c0 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | b3023d24b5d58765a3e9a20ff1a28521 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
| Supplier Device Package: | 13a5779ced06888106a2acdcd2b95b6f |
