2SK2847(F)

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See Product Specifications

Mfr. #:

2SK2847(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 900V 8A TO3PIS

Упаковка:

Tube

Datasheet:

2SK2847(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2847(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	3f9b80b2313763e17eb9d4414601dfee
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	963156a1d4e76144d05e6369a9fc934d
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	cb7f32980d4e20761ca926e278c4ed39
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	28b4241c8974d9c2f28c784a1940cfa6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f49c033327877828534a019e7d8b464b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	70f4139c3ef3edb28e2e98bcdd3ba8b1
Package / Case:	a37ad9863329afbf5b7bab5645143153