MT3S111TU,LF

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See Product Specifications

Mfr. #:

MT3S111TU,LF

Mfr.:

Toshiba Semiconductor and Storage

Описание:

RF SIGE NPN BIPOLAR TRANSISTOR N

Упаковка:

Tape & Reel (TR)

Datasheet:

MT3S111TU,LF Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	MT3S111TU,LF
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - RF
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	e3d31b6d6c1368232482785f7e6d9bd1
Voltage - Collector Emitter Breakdown (Max):	d58bb95aef80a9b06259c05a8650ba50
Frequency - Transition:	e28ef9a06382bdd8b547ce7c8dae624c
Noise Figure (dB Typ @ f):	78a7f9ed5bb171bed102d8902d2a6e71
Gain:	e9b66e41919ce0ef17549c37fec97889
Power - Max:	9d9d9e34d2b4ce1838ff67d08baeabe0
DC Current Gain (hFE) (Min) @ Ic, Vce:	7b3705ab9394e097c241356096848bf8
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	1e494d23f62f349de08e505c5ed4c860
Supplier Device Package:	45a242930c98cd8e8b47722557104d66

In Stock: 15000

Stock:

15000 Can Ship Immediately