RN1966FE(TE85L,F)

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See Product Specifications

Mfr. #:

RN1966FE(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS 2NPN PREBIAS 0.1W ES6

Упаковка:

Tape & Reel (TR)

Datasheet:

RN1966FE(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	RN1966FE(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	7d0134c7e1396ad690f8d37b56336df5
Current - Collector (Ic) (Max):	8fa6a3a617ed852de22fab67a97483fa
Voltage - Collector Emitter Breakdown (Max):	ef3fbc276cb9f08e57f243ec2875d986
Resistor - Base (R1):	0e73efaf406ca87292d539a538458d94
Resistor - Emitter Base (R2):	d80113e8d6286cadac92afe87493ba31
DC Current Gain (hFE) (Min) @ Ic, Vce:	a23a0d1fb6398094cbadf4b8b7721c5f
Vce Saturation (Max) @ Ib, Ic:	7524c639e20d87fca4539a9c3d87feb3
Current - Collector Cutoff (Max):	deeb8c7cafdc46f12ef41020ec559854
Frequency - Transition:	ed54b48b4b98a53ca5d3d8bed2512fbd
Power - Max:	c4a759f95e24e7e8bc893d7baf9d09b4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	86215ac6c939e87a911385cbe7e7abfb
Supplier Device Package:	a341a0ec0c824fdb4da2f951178d486b