TK190U65Z,RQ

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Mfr. #:

TK190U65Z,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

DTMOS VI TOLL PD=130W F=1MHZ

Упаковка:

Tape & Reel (TR)

Datasheet:

TK190U65Z,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK190U65Z,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	d93d6ce17957df3133849cc93b547875
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	0f0c0f1160cfb32af0c5f2cead81fcb5
Vgs(th) (Max) @ Id:	339a6c9a3f431958989535683153aa6f
Gate Charge (Qg) (Max) @ Vgs:	de0812168e822f1110815fd33f6452ea
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0da55e9a9dcad735d198b9dc9cee8b03
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	56585d83f707826d265fba1f54e2fd6a
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	e203dedf4441205b61adf50c8efad497
Package / Case:	a976ee29126ce1a6bb3b65de97278f82