TK35E10K3(S1SS-Q)

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Mfr. #:

TK35E10K3(S1SS-Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 35A TO-220AB

Упаковка:

Tube

Datasheet:

TK35E10K3(S1SS-Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK35E10K3(S1SS-Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	336d5ebc5436534e61d16e63ddfca327
Technology:	336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):	336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468