TK56E12N1,S1X

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See Product Specifications

Mfr. #:

TK56E12N1,S1X

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N CH 120V 56A TO-220

Упаковка:

Tube

Datasheet:

TK56E12N1,S1X Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK56E12N1,S1X
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53b3b1ea0de8e56a28871162445a88f6
Current - Continuous Drain (Id) @ 25°C:	b8929daead8144b1944a3dead9a5a2bd
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c443690e7b5e0cebf12dba0cc5385da6
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	30d42a4f57ee9fd79c5d90774c43a790
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ed71e9620e7ec60b2a985922cc8db7d3
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	196f6ced0e1bf88f38ea62fb7150be5f
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468