SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

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SIR882ADP-T1-GE3
Описание:
MOSFET N-CH 100V 60A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR882ADP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR882ADP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:9f8f720b816964c56793adc24289989e
Vgs(th) (Max) @ Id:8fe7610677dc5fce7875270a0a1100b7
Gate Charge (Qg) (Max) @ Vgs:89853fdd6ed2eb1978d2d551614252a1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:729f1e2e05f7768aa88068e0fd4412a1
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d9bc59380bb59f17adc10103301f9c8e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 4242
Stock:
4242 Can Ship Immediately
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