SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

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SQ2310ES-T1_GE3
Описание:
MOSFET N-CH 20V 6A TO236
Упаковка:
Tape & Reel (TR)
Datasheet:
SQ2310ES-T1_GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SQ2310ES-T1_GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:ff2da2e5c593aab4d0b1e137db724b7a
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:8765e20f8719c69c7da13a4228bf8121
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:d9dda6f36abf413463f9b675077b45df
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:09268508368c4b1cce6b526d553f8563
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):605368d8bc70074f81d20bc5842a73b6
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:86ee1c19077e759cc02645e69bcd58b2
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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