GoodChip

Transistors - FETs, MOSFETs - RF

3813 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
BLF7G20L-90P112 LDMOS RF POWER TRANSISTOR Ampleon USA Inc.	BLF	Bulk	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	19.5dB	28 V	2µA	-	550 mA	90W	65 V	SOT-1121A	LDMOST
BLF8G22LS-270112 LDMOS RF POWER TRANSISTOR Ampleon USA Inc.	BLF	Bulk	Active	LDMOS	2.11GHz ~ 2.17GHz	17.7dB	28 V	4.2µA	-	2.4 A	270W	65 V	SOT-502B	SOT502B
MRF8HP21130HR5 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor		Bulk	Obsolete	LDMOS (Dual)	2.17GHz	14dB	28 V	-	-	360 mA	28W	65 V	NI-780-4	NI-780-4
MRF8S23120HR5 POWER, N-CHANNEL, MOSFET Freescale Semiconductor		Bulk	Obsolete	LDMOS	2.3GHz	16dB	28 V	-	-	800 mA	28W	65 V	SOT-957A	NI-780H-2L
MRF8HP21130HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.17GHz	14dB	28 V	-	-	360 mA	28W	65 V	NI-780S-4	NI-780S-4
MRF7S38040HSR5 FET RF 65V 3.6GHZ NI-400S Freescale Semiconductor		Bulk	Active	LDMOS	3.4GHz ~ 3.6GHz	14dB	30 V	-	-	450 mA	8W	65 V	NI-400S-2S	NI-400S-2S
AFT26HW050SR3 RF N CHANNEL, MOSFET Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.496GHz ~ 2.69GHz	14.2dB	28 V	10µA	-	100 mA	9W	65 V	NI-780-4S4	NI-780-4S4
BLF8G10LS-270,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.		Tube	Active	LDMOS	820MHz ~ 960MHz	18.5dB	28 V	4.2µA	-	2 A	270W	65 V	SOT-502B	SOT502B
MRF5S9150HR5 FET RF 68V 880MHZ NI-780S Freescale Semiconductor		Bulk	Active	LDMOS	880MHz	19.7dB	28 V	-	-	1.5 A	33W	68 V	SOT-957A	NI-780H-2L
CLF1G0060S-10 RF PFET, 1-ELEMENT, C BAND, GALL NXP USA Inc.		Bulk	Active	GaN HEMT	6GHz	16dB	50 V	-	-	50 mA	10W	150 V	SOT-1227B	SOT1227B
BLC10G22XS-570AVTZ BLC10G22XS-570AVT/SOT1258/TRAY Ampleon USA Inc.	BLC	Tray	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.18GHz	15.7dB	30 V	2.8µA	-	1.15 A	570W	65 V	SOT-1258-4	SOT1258-4
AFT26H050W26SR3 RF N CHANNEL, MOSFET Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.496GHz ~ 2.69GHz	14.2dB	28 V	10µA	-	100 mA	9W	65 V	NI-780S-4L4L-8	NI-780S-4L4L-8
MRF6S9130HR5 FET RF 68V 880MHZ NI-780 Freescale Semiconductor		Bulk	Active	LDMOS	880MHz	19.2dB	28 V	-	-	950 mA	27W	68 V	SOT-957A	NI-780H-2L
MRF5S21130HSR5 FET RF 65V 2.17GHZ NI-880S Freescale Semiconductor		Bulk	Active	LDMOS	2.11GHz ~ 2.17GHz	13.5dB	28 V	-	-	1.2 A	28W	65 V	NI-880S	NI-880S
BLF6G27LS-75,112 RF TRANSISTOR NXP USA Inc.		Tray	Obsolete	LDMOS	-	-	28 V	18A	-	600 mA	9W	65 V	SOT-502B	SOT502B
MRF6S19120HR5 FET RF 68V 1.99GHZ NI-780 Freescale Semiconductor		Bulk	Active	LDMOS	1.99GHz	15dB	28 V	-	-	1 A	19W	68 V	SOT-957A	NI-780H-2L
MWT-PH8F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.		Case	Active	pHEMT FET	26GHz	12dB	3 V	300mA	-	1 mA	30dBm	-	Die	Chip
MD7P19130HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	1.99GHz	20dB	28 V	-	-	1.25 A	40W	65 V	NI-780S-4	NI-780S-4
MD7P19130HR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	1.99GHz	20dB	28 V	-	-	1.25 A	40W	65 V	NI780-4	NI-780-4
MRF8P20100HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.03GHz	16dB	28 V	-	-	400 mA	20W	65 V	NI-780S-4	NI-780S-4