GoodChip

Transistors - FETs, MOSFETs - RF

3813 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
MRF9135LR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor		Bulk	Active	LDMOS	865MHz ~ 895MHz	17.8dB	26 V	10µA	-	1.1 A	135W	65 V	SOT-957A	NI-780H-2L
MRF6S27085HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor		Bulk	Obsolete	LDMOS	2.66GHz	15.5dB	28 V	-	-	900 mA	20W	68 V	SOT-957A	NI-780H-2L
CGH35015F 15W GAN HEMT 28V 6.0GHZ FLANGE Wolfspeed, Inc.	GaN	Tray	Active	HEMT	3.3GHz ~ 3.9GHz	12dB	28 V	-	-	100 mA	15W	84 V	440196	440196
MRF8S21120HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2.17GHz	17.6dB	28 V	-	-	850 mA	28W	65 V	NI-780S	NI-780S
MRF6S9160HR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor		Bulk	Active	LDMOS	880MHz	20.9dB	28 V	-	-	1.2 A	35W	68 V	SOT-957A	NI-780H-2L
MRF6S9160HSR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor		Bulk	Active	LDMOS	880MHz ~ 960MHz	20.9dB	28 V	10µA	-	1.2 A	35W	68 V	NI-780S	NI-780S
BLD6G22LS-50,112 RF TRANSISTOR NXP USA Inc.		Tray	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V	SOT-1130B	CDFM4
BLC10G19XS-601AVTY BLC10G19XS-601AVTY/SOT1258/REEL Ampleon USA Inc.		Tape & Reel (TR)	Active	LDMOS (Dual), Common Source	1.93GHz ~ 1.995GHz	15dB	30 V	2.8µA	-	1.06 A	600W	65 V	SOT-1258-4	SOT1258-4
BLC10G22XS-603AVTY BLC10G22XS-603AVTY/SOT1258/REEL Ampleon USA Inc.		Tape & Reel (TR)	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	15.4dB	30 V	2.8µA	-	1.2 A	600W	65 V	SOT-1258-4	SOT1258-4
MRFE6S9135HR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor		Bulk	Active	LDMOS	1GHz	21dB	28 V	10µA	-	1 A	39W	66 V	SOT-957A	NI-880H-2L
MRFE6S9135HR5 FET RF 66V 940MHZ NI-880 Freescale Semiconductor		Bulk	Active	LDMOS	940MHz	21dB	28 V	-	-	1 A	39W	66 V	NI-880	NI-880
MRF8S21100HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2.11GHz ~ 2.17GHz	18.3dB	28 V	10µA	-	700 mA	24W	65 V	NI-780S	NI-780S
MRF8S21200HR6 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.14GHz	18.1dB	28 V	-	-	1.4 A	48W	65 V	NI-1230	NI-1230
MWT-PH15F MED POWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.		Case	Active	MESFET	28GHz	12dB	4 V	170mA	-	170 mA	28.5dBm	6 V	Die	Chip
MRF6V4300NBR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor		Bulk	Active	LDMOS	10MHz ~ 600MHz	22dB	50 V	2.5mA	-	900 mA	300W	110 V	TO-272BB	TO-272 WB-4
MRF8S18120HSR3 RF L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	1.81GHz	18.2dB	28 V	-	-	800 mA	72W	65 V	NI-780S	NI-780S
MRFE6S9200HR3 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor		Bulk	Active	LDMOS	880MHz	21dB	28 V	-	-	1.4 A	58W	66 V	NI-880	NI-880
MRF8P20161HSR3 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	1.92GHz	16.4dB	28 V	-	-	550 mA	37W	65 V	NI-780S-4	NI-780S-4
MRF6S23140HR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2.3GHz ~ 2.4GHz	15.2dB	28 V	10µA	-	1.3 A	28W	68 V	SOT-957A	NI-880H-2L
BLF7G10L-250,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.		Tube	Active	LDMOS	920MHz ~ 960MHz	19.5dB	30 V	-	-	1.8 A	60W	65 V	SOT-502A	LDMOST