GoodChip

Transistors - FETs, MOSFETs - RF

3813 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
BLF7G10LS-250,112 N-CHANNEL, MOSFET NXP USA Inc.		Tube	Active	LDMOS	869MHz ~ 960MHz	19.5dB	30 V	5µA	-	1.8 A	250W	65 V	SOT-502B	SOT502B
MRF7S21150HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2.11GHz ~ 2.17GHz	17.5dB	28 V	-	-	1.35 A	44W	65 V	NI-780S	NI-780S
MRF6S19140HR3 RF L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	1.93GHz ~ 1.99GHz	16dB	28 V	10µA	-	1.15 A	29W	68 V	SOT-957A	NI-880H-2L
MRF6S19140HR5 FET RF 68V 1.99GHZ NI-880 Freescale Semiconductor		Bulk	Active	LDMOS	1.93GHz ~ 1.99GHz	16dB	28 V	-	-	1.15 A	29W	68 V	NI-880	NI-880
MRF6S18140HR5 FET RF 68V 1.88GHZ NI880 Freescale Semiconductor		Bulk	Active	LDMOS	1.88GHz	16dB	28 V	-	-	1.2 A	29W	68 V	NI-880	NI-880
MRF8S21200HSR6 RF 2-ELEMENT, S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	2.14GHz	18.1dB	28 V	-	-	1.4 A	48W	65 V	NI-1230S	NI-1230S
MRF7S21170HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2.17GHz	16dB	28 V	-	-	1.4 A	50W	65 V	NI-880S	NI-880S
AFT26HW050GSR3-NXP RF N CHANNEL, MOSFET NXP USA Inc.		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
MRF5S19130HR3 RF L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	2GHz	13dB	28 V	10µA	-	1.2 A	26W	65 V	SOT-957A	NI-880H-2L
BLF7G27L-150P,112 RF TRANSISTOR NXP USA Inc.		Tube	Obsolete	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	16.5dB	28 V	37A	-	1.2 A	30W	65 V	SOT-539A	SOT539A
MRF21125R3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	N-Channel	2.11GHz ~ 2.17GHz	13dB	28 V	10µA	-	1.6 A	125W	65 V	SOT-957A	NI-880H-2L
MRFE6S9201HSR5 FET RF 66V 880MHZ NI-780S Freescale Semiconductor		Bulk	Active	LDMOS	880MHz	20.8dB	28 V	-	-	1.4 A	40W	66 V	NI-780S	NI-780S
CGH27030P 30W, GAN HEMT, 28V, DC-6.0GHZ, P Wolfspeed, Inc.	GaN	Tray	Active	HEMT	2.3GHz ~ 2.9GHz	14.5dB	28 V	-	-	150 mA	30W	84 V	440196	440196
BLA1011-10 OXIDE SEMICONDUCTOR FET Ampleon USA Inc.		Bulk	Active	LDMOS	1.03GHz ~ 1.09GHz	15dB	36 V	100µA	-	50 mA	10W	75 V	SOT-467C	SOT467C
MRF8P20165WHSR5 FET RF 2CH 65V 2.01GHZ NI780S4 Freescale Semiconductor		Bulk	Obsolete	LDMOS (Dual)	1.88GHz ~ 2.025GHz	14.8dB	28 V	10µA	-	550 mA	37W	65 V	NI-780S-4	NI-780S-4
MRF5S19150HSR5 FET RF 65V 1.99GHZ NI-880S Freescale Semiconductor		Bulk	Active	LDMOS	1.93GHz ~ 1.99GHz	14dB	28 V	-	-	1.4 A	32W	65 V	NI-880S	NI-880S
MRF7S38075HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	3.4GHz ~ 3.6GHz	14dB	30 V	-	-	900 mA	12W	65 V	NI-780S	NI-780S
MRF8S19260HR6 RF 2-ELEMENT, L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	1.99GHz	18.2dB	30 V	-	-	1.6 A	74W	65 V	SOT-1110A	NI1230-8
MRF8S19260HSR6 RF 2-ELEMENT, L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS (Dual)	1.99GHz	18.2dB	30 V	-	-	1.6 A	74W	65 V	SOT-1110B	NI1230S-8
MRF7S19170HSR3 RF L BAND, N-CHANNEL Freescale Semiconductor		Bulk	Active	LDMOS	1.99GHz	17.2dB	28 V	-	-	1.4 A	50W	65 V	NI-880S	NI-880S