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See Product Specifications
| номер части: | RN2105ACT(TPL3) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 61de53416e92e38b3c8ecc0dac09cf4e |
| Current - Collector (Ic) (Max): | 48a17c98273ebfca8cd4f0b9d84ba7bc |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | e85102c5e32a145a3450a496c2a5e52d |
| Resistor - Emitter Base (R2): | 942094f166c564b47b30fc312241d4ad |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
| Vce Saturation (Max) @ Ib, Ic: | e61ff4fa353c3aa540d0601a110c83ce |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 0ac361d2907a7f247850300cb12747c5 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 712561badb0e7c3e9ec18eb67d158a45 |
| Supplier Device Package: | 917d74eac8837850506d788d0fc4ad55 |
