TW060N120C,S1F

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Mfr. #:

TW060N120C,S1F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

G3 1200V SIC-MOSFET TO-247 60MO

Упаковка:

Tube

Datasheet:

TW060N120C,S1F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TW060N120C,S1F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	9c6688ef624c6423a2454cecdc869df8
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	dee018c5d7cc2ec69b4278e384f4f190
Drive Voltage (Max Rds On, Min Rds On):	4fe830fc54951fe85de6fed766954259
Rds On (Max) @ Id, Vgs:	fb2e58326218656eaac37cc7da332b5b
Vgs(th) (Max) @ Id:	8d7eda428cde0df0a5f0c8c093760df0
Gate Charge (Qg) (Max) @ Vgs:	0ca02749e5678d4c28e3289ddab31870
Vgs (Max):	1d451f433f14e0cd99646c5802738209
Input Capacitance (Ciss) (Max) @ Vds:	1b694314163b470e37d3a1b186a90546
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	bfa3d0a034898aeabdf672484043fbee
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40