G08P06D3

G08P06D3

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G08P06D3
Описание:
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Упаковка:
Tape & Reel (TR)
Datasheet:
G08P06D3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G08P06D3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f38bdd924b5a57d287e6a57a1683cb14
Vgs(th) (Max) @ Id:54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:a03ef68e4225c24eb55a95609aadb719
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ce892e08a02904e7c6919ebe055afbdc
Package / Case:67fd376bd79eda48286f8f6e0131d8c9
In Stock: 5000
Stock:
5000 Can Ship Immediately
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